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| Proposed 0 Typical Applications * Cellular Basestation Amplifiers and Transceivers * Gain Stage or Driver Amplifiers for Linear and Saturated Amplifiers RF3817 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 3GHz * Narrow and Broadband Commercial and Military Radio Designs E S The RF3817 is a high-performance InGaP/GaAs general purpose RF and microwave gain block amplifier. This 50 amplifier is based on a reliable HBT MMIC design, providing unsurpassed performance for many small-signal applications. Designed with an external bias resistor, the RF3817 provides high output power and high gain over broad frequency range. This low-cost amplifier is packaged in a thermally efficient, industry standard, SOT89 package. 1.04 0.80 IG N S 0.50 0.30 4.60 4.40 2.60 2.40 Dimensions in mm. Product Description 1.60 1.40 3.10 2.90 0.48 0.36 2 PL D Shaded lead is pin 1. 1.75 1.40 0.43 0.38 1.80 1.45 W 0.53 0.41 Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT Si CMOS N E GaAs MESFET SiGe Bi-CMOS Package Style: SOT89 Features * Reliable, Low-Cost HBT Design * 19.1dB Gain, +19.0dBm P1dB@1.0GHz * High P1dB of +18.8dBm@3.0GHz * Single 6V Power Supply Operation * 50 I/O Matched * Thermally-Efficient Package Ordering Information N O T GND 4 FO R 2 GND 3 RF OUT 1 RF IN Functional Block Diagram Cascadable Broadband GaAs MMIC Amplifier DC to 3GHz (Bulk: 25 piece increment) RF3817SB 5-piece Sample Bag RF3817SR 100-piece Reel RF3817TR7 7" Reel (750 pieces) RF3817TR13 13" Reel (2,500 pieces) RF3817PCBA-410 Evaluation Board RF Micro Devices, Inc. Tel (336) 664 1233 7628 Thorndike Road Fax (336) 664 0454 Greensboro, NC 27409, USA http://www.rfmd.com NOT FOR NEW DESIGNS RF3817 Rev A2 041013 4-1 RF3817 Proposed Please contact RF Micro Devices Applications Engineering at (336) 678-5570 for more information. N O T 4-2 FO R N E W D E S Rev A2 041013 IG N S |
Price & Availability of RF3817
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